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1

Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors

Nylandsted-Larsen, Arne, Petersen, J.W., Weyer, G.

Journal:

Materials Science Forum

Année:

1989

Fichier:

PDF, 571 KB

1989

2

Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon

Weyer, G., Nylandsted-Larsen, Arne, Pedersen, F.T., Galloni, R., Rizzoli, R.

Journal:

Materials Science Forum

Année:

1986

Fichier:

PDF, 334 KB

1986

3

Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon Heterostructures

Silvestri, Hughes H., Bracht, Hartmut A., Sharp, Ian D., Hansen, John, Nylandsted-Larsen, Arne, Haller, Eugene E.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 99 KB

english, 2004

4

Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments

Weyer, G., Fanciulli, M., Freitag, Kristian, Nylandsted-Larsen, Arne, Lindroos, M., Müller, E., Vestergaard, H.C.

Journal:

Materials Science Forum

Année:

1995

Fichier:

PDF, 378 KB

1995

5

Defects in SiGe

Nylandsted-Larsen, Arne

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 525 KB

1997

6

Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex

Thomsen, E.V., Nylandsted-Larsen, Arne, Hansen, J.L., Kringhøj, P., Shiryaev, S.Y., Weyer, G.

Journal:

Materials Science Forum

Année:

1994

Fichier:

PDF, 355 KB

1994

7

Boron Diffusion in Strained and Relaxed Si1-xGex

Zangenberg, N.R., Fage-Pedersen, J., Lundsgaard Hansen, J., Nylandsted-Larsen, Arne

Journal:

Defect and Diffusion Forum

Année:

2001

Fichier:

PDF, 466 KB

2001

8

Defect Impurity Complex Formation at High Donor Concentration in Silicon

Nylandsted-Larsen, Arne, Weyer, G.

Journal:

Materials Science Forum

Année:

1992

Fichier:

PDF, 338 KB

1992

9

The Effect on the Schottky Barrier Height of Diffusion of Pt into Si From PtSi

Moller, L., Chevallier, Jacques, Nylandsted-Larsen, Arne

Journal:

Solid State Phenomena

Année:

1989

Fichier:

PDF, 287 KB

1989

10

Diffusion of Sb in Si1-xGex-Alloy Layers

Kringhøj, P., Nylandsted-Larsen, Arne

Journal:

Defect and Diffusion Forum

Année:

1997

Fichier:

PDF, 426 KB

1997

11

Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si

Janson, Martin S., Linnarsson, Margareta K., Christensen, J.S., Lévêque, P., Kuznetsov, Andrej Yu., Radamson, H.H., Hallén, Anders, Nylandsted-Larsen, Arne, Svensson, Bengt G.

Journal:

Defect and Diffusion Forum

Année:

2001

Langue:

english

Fichier:

PDF, 745 KB

english, 2001

12

Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures

Silvestri, Hughes H., Sharp, Ian D., Bracht, Hartmut A., Nicols, Sam P., Beeman, Jeff W., Hansen, John, Nylandsted-Larsen, Arne, Haller, Eugene E.

Journal:

MRS Proceedings

Année:

2002

Langue:

english

Fichier:

PDF, 107 KB

english, 2002

13

Enhanced Electrical Activation in In-Implanted Si 0.35 Ge 0.65 by C Co-Doping

Feng, Ruixing, Kremer, Felipe, Sprouster, David J., Mirzaei, Sahar, Decoster, Stefan, Glover, Chris J., Medling, Scott A., Hansen, John Lundsgaard, Nylandsted-Larsen, Arne, Russo, Salvy P., Ridgway, M

Journal:

Materials Research Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.65 MB

english, 2016